Gallium Nitride

Invited Speakers

  • Dimiter Alexandrov, Lakehead University, Canada
    Nano-effects in GaN and their applications in energy semiconductor devices
  • Hideo Aida and Toshiro Doi, Kyushu University, Japan
    Fabrication of Gallium Nitride Substrate with Novel Approaches
  • Izabella Grzegory, Institute of High Pressure Physics PAS, Poland
    Growth of bulk GaN by HVPE on Ammono-GaN seeds
  • Malek Gassoumi, Al qassim University, Arabie Saoudite
    Study of deep level in AlGaN/GaN HEMT by DLTS and CDLTS
  • Valeri Harutyunyan, Yerevan State University, Armenia
    Theoretical model of the elastic strain relaxation in group-III nitride heterostructures
  • Albena Ivanisevic, North Carolina State University, United States
    Development of Gallium Nitride-Based Bio-Interfaces Using Surface Functionalization Techniques and Characterization
  • Hongxing Jiang, Texas Tech University, United States
    Nitride solar cells
  • Stefan Krischok, Technische Universität Ilmenau, Germany
    Surface properties of in situ grown GaN and its interaction with simple molecules
  • Tae Geun Kim, Korea University, Korea
    A novel ohmic method to wide-bandgap semiconductors and its application to thin GaN LEDs
  • Jingyu Lin, Texas Tech University, United States
    III-nitride micro- and nano-photonic devices
  • Farid Medjdoub, CNRS, France
    High voltage GaN-on-Silicon transistors for next generation of high power devices
  • Saulius Marcinkevicius, KTH Royal Institute of Technology, Sweden
    Scanning Near-field Optical Spectroscopy of GaN-based films, quantum wells and LEDs
  • Galia Pozina, Linköping University, Sweden
    Free-standing bulk GaN wafers grown by halide vapor phase epitaxy
  • Ratnakar Palai, University of Puerto Rico, USA
    Rare earth based III-nitrides nanostructures for spintronic and  optoelectronic applications
  • Pierre Ruterana, CNRS, France
    Indium rich InGaN alloys for photovoltaics


Workshop Chair:

  • Qiyuan Wei, Soraa. Inc, United States
Operating Organization

University of Electronic Science and Technology of China